(ÁÖ)¸µÅ©ÅØ
LTE ´ë¿ª°áÇÕ±â Part.2
Device Type |
Cavity Duplexer
|
---|---|
Interface | N Female |
Åë°ú´ë¿ª ÁÖÆļö ¹üÀ§ | 824~849, 869~894, 1920~1980, 2110~2170 MHz |
ÀúÇ×(mpedance) | 50 ¥Ø |
¹Ý»ç¼Õ½Ç | 18dB |
»ðÀÔ¼Õ½Ç | -0.6 dB (max.) |
Ripple | -0.3 dB (max.) |
Rejection | 35 dBc (min.) |
PIMD | 3rd -140 , 5rd -160 dBc (relative to carrier) |
IMD Test Method |
Two +43 dBm carriers
|
Average Power, maximum | 150 W |
Operating Temperature / Humidity | -40 ~ +70 ¡ÆC / Up to 95% |
Inner Contact Plating | Silver Plated |
Outer Contact Plating | SUCO (Alloy of Cu/ Sn/ Zn) Plated |
Ingress Protection Test Method | IEC 60529:2001, IP65 |