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LTE ´ë¿ª°áÇÕ±â Part.3
Åë°ú´ë¿ª ÁÖÆļö ¹üÀ§ |
800M / 824~894MHz 1.8G / 1710~1830MHz 2.1G / 1930~2150MHz 2.6G / 25000~2670MHz |
---|---|
ÀúÇ×(mpedance) | 50 ¥Ø |
¹Ý»ç¼Õ½Ç | 18dB |
»ðÀÔ¼Õ½Ç | -0.3 dB (max.) |
Rejection | -50 dB (min.) |
IMD | -150 dBc ÀÌÇÏ |
IMD Test Method |
Two +43 dBm carriers
|
Average Power, maximum | 100W |
Operating Temperature / Humidity | -30 ~ +60 ¡ÆC / Up to 95% |
Inner Contact Plating | Silver Plated |
Outer Contact Plating | SUCO (Alloy of Cu/ Sn/ Zn) Plated |
Ingress Protection Test Method | IEC 60529:2001, IP65 |