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LTE ´ë¿ª°áÇÕ±â Part.3
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P1-P3 / 0.8G / 824~894MHz P1-P3 / 1.8G / 1710~2150MHz P1-P3 / 2.1G / 1710~2150MHz P2-P3 / 2.6G / 2500~2670MHz |
---|---|
ÀúÇ×(mpedance) | 50 ¥Ø |
¹Ý»ç¼Õ½Ç | 18dB |
»ðÀÔ¼Õ½Ç | -0.3 dB |
Rejection | -50 dB (min.) |
IMD |
3Â÷ 150dBc min (800M, 2.6G) 5Â÷ 160dBc min (1.8G/2.1G) |
IMD Test Method |
Two +43 dBm carriers
|
Average Power, maximum | 200W |
Operating Temperature / Humidity | -40 ~ +70 ¡ÆC / Up to 95% |
Inner Contact Plating | Silver Plated |
Outer Contact Plating | SUCO (Alloy of Cu/ Sn/ Zn) Plated |
Ingress Protection Test Method | IEC 60529:2001, IP65 |