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LTE ´ë¿ª°áÇÕ±â Part.3

´ë¿ª°áÇÕ±â No.50 (»ó¼¼)

LTE ´ë¿ª°áÇÕ±â
FBC-2P-200
(0.8~2.1/2.6,MiBOS)




  • Åë°ú´ë¿ª ÁÖÆļö ¹üÀ§ P1-P3 / 0.8G / 824~894MHz
    P1-P3 / 1.8G / 1710~2150MHz
    P1-P3 / 2.1G / 1710~2150MHz
    P2-P3 / 2.6G / 2500~2670MHz
    ÀúÇ×(mpedance) 50 ¥Ø
    ¹Ý»ç¼Õ½Ç 18dB
    »ðÀÔ¼Õ½Ç -0.3 dB
    Rejection -50 dB (min.)
    IMD 3Â÷ 150dBc min (800M, 2.6G)
    5Â÷ 160dBc min (1.8G/2.1G)
    IMD Test Method Two +43 dBm carriers
    Average Power, maximum 200W
    Operating Temperature / Humidity -40 ~ +70 ¡ÆC / Up to 95%
    Inner Contact Plating Silver Plated
    Outer Contact Plating SUCO (Alloy of Cu/ Sn/ Zn) Plated
    Ingress Protection Test Method IEC 60529:2001, IP65